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BUZ102S View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BUZ102S SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Infineon
Infineon Technologies Infineon
BUZ102S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 102S
Typ. output characteristics
ID = f (VDS)
parameter: tp = 80 µs
BUZ102S
130 Ptot = 120W
A
l
110
kj
i
100
90
80
VGS [V]
a
4.0
hb
4.5
c
5.0
gd
5.5
e
6.0
70
ff
g
60
h
50
ei
j
40
dk
l
30
c
20
b
10
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
V 5.0
VDS
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 µs
VDS 2 x ID x RDS(on) max
80
A
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: VGS
BUZ102S
0.060
b
c
d
e
f
g
h
0.050
0.045
0.040
0.035
0.030
0.025
i
0.020
j
k
0.015
l
0.010
VGS [V] =
0.005
bc def
4.5 5.0 5.5 6.0 6.5
ghi j kl
7.0 7.5 8.0 9.0 10.0 20.0
0.000
0
20
40
60
80
A
120
ID
Typ. forward transconductance
gfs = f(ID); Tj = 25˚C
parameter: gfs
35
S
25
20
40
15
10
20
5
0
2
3
4
5
V
7
VGS
Data Book
6
0
0
10 20 30 40 50 A
70
ID
05.99
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