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BUZ102S View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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BUZ102S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 102S
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 52 A
Gate to drain charge
VDD = 40 V, ID = 52 A
Gate charge total
VDD = 40 V, ID = 52 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 52 A
Qgs
-
Qgd
-
Qg
-
V(plateau)
-
8
12 nC
23 34.5
45 70
5.9
-V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ˚C
-
-
52 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
-
208
Inverse diode forward voltage
VGS = 0 V, IF = 104 A
VSD
-
1.2 1.7 V
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
trr
-
70 105 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
- 0.15 0.25 µC
Data Book
4
05.99
 

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