BD9244AFV View Datasheet(PDF) - ROHM Semiconductor
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BD9244AFV Datasheet PDF : 5 Pages
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〇NOTE FOR USE
１. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate
margins for steady state and transient characteristics.
２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended
operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges,
however the variation will be small.
３. Mounting failures, such as misdirection or miscounts, may harm the device.
４. A strong electromagnetic field may cause the IC to malfunction.
５. The GND pin should be the location within ±0.3V compared with the PGND pin.
６. If the voltage between VCC and I/O pins or GND and I/O pins is in opposite from the normal potential difference, unusual
current flow into pins may occur which can destroy the IC. To avoid such occurrence it is recommended to place protection
diodes for prevention against backward current flow.
７. BD9244AFV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee
its operation of the thermal shutdown circuit is assumed.
８. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need
to be considered when using a device beyond its maximum ratings.
９. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching.
Make sure to leave adequate margin for this IC variation.
１０. By STB voltage, BD9244AFV are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other
state (1.0～2.0V).
１１. The pin connected a connector need to connect to the resistor for electrical surge destruction.
１２．This IC is a monolithic IC which (as shown is Fig.4)has P+ substrate and between the various pins. A P-N junction is
formed from this P layer of each pin. For example, the relation between each potential is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which
parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin
(PinA)
Resistance
(PinB)
Transistor (NPN)
Ｂ
Ｃ
Ｅ
Ｐ
Ｎ
Ｐ
Ｎ
Ｐ
Ｎ
P substrate
ＧＮＤ
Parasitic diode
Ｎ
Ｐ
Ｐ
Ｐ
Ｎ
Ｎ
P substrate
ＧＮＤ
Parasitic diode
ＧＮＤ
Ｎ
(PinB)
(PinA)
Parasitic
ＧＮＤ
ＢＣ
Ｅ
Parasitic diode
ＧＮＤ
Other adjacent components
Fig.4. Simplified structure of a Bipolar IC
REV. A
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