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Part Name
Description
K3543 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K3543
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3543 Datasheet PDF : 0 Pages
2.0
Common source
Tc
=
25°C
pulse test
1.6
I
D
– V
DS
10
6.0
8.0
5.25
5.0
1.2
4.75
0.8
4.5
4.25
0.4
VGS
=
4.0 V
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
5
Common source
VDS
=
20 V
pulse test
4
I
D
– V
GS
3
2
100
1
25
Tc
= -
55°C
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
2SK3543
I
D
– V
DS
5
Common source
10 8.0
6.0
Tc
=
25°C
pulse test
4
5.75
3
5.5
5.25
2
5.0
4.75
1
VGS
=
4.25 V
0
0
10
20
30
40
50
Drain-source voltage V
DS
(V)
V
DS
– V
GS
10
Common source
Tc
=
25°C
pulse test
8
6
ID
=
2.0 A
4
1.0
2
0.5
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
10
Common source
5
VDS
=
20 V
pulse test
3
1
ï
Y
fs
ï -
I
D
Tc
= -
55°C
25
100
0.5
0.3
0.2
0.1
0.3 0.5
1
35
10
Drain current I
D
(A)
30
Common source
Tc
=
25°C
Pulse test
10
R
DS (ON)
-
I
D
5
3
VGS
=
10, 15 V
1
0.5
0.1
0.3 0.5
1
35
10
Drain current I
D
(A)
3
2002-09-04
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