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K2315 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
K2315
Renesas
Renesas Electronics Renesas
K2315 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK2315
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)*1
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1 %
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)
Ratings
60
±20
2
4
2
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
60
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
0.5
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
|yfs|
1.5
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on time
ton
Turn-off time
toff
Note: 3. Pulse Test
Typ
0.4
0.35
1.8
173
85
23
21
85
Max
±5
5
1.5
0.6
0.45
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.3 A, VGS = 3 V*3
ID = 1 A, VGS = 4 V*3
ID = 1 A, VDS = 10 V*3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, RL = 30 ,
VGS = 10 V
Rev.2.00 Sep. 07, 2005 page 2 of 5
 

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