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K1807 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1807 Silicon N-Channel MOS FET (High speed power switching) Renesas
Renesas Electronics Renesas
K1807 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1807
Main Characteristics
Power vs. Temperature Derating
90
60
30
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
5
10 V
4
6 V Pulse Test
5V
3
4.5 V
2
1
4V
VGS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
5A
16
Pulse Test
12
8
2A
4
ID = 1 A
0
4
8
12
16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
1
0.5
0.2
0.1
OilnpimethirtaiestdioabnreyaRisDS
(on)
DC
PW
=
Operation
(1T0cm=1s2(m51°1sCS0)h0oµt)s
Ta = 25°C
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 20 V
Pulse Test
4
3
2
75°C
TC = 25°C
1
–25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
VGS = 10 V
5
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current ID (A)
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