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K1807 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1807 Silicon N-Channel MOS FET (High speed power switching) Renesas
Renesas Electronics Renesas
K1807 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1807
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol Min
Typ
Drain to source breakdown voltage V(BR)DSS 900
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on state
resistance
RDS(on)
3.0
Forward transfer admittance
|yfs|
1.7
2.7
Input capacitance
Ciss
740
Output capacitance
Coss
305
Reverse transfer capacitance
Crss
150
Turn-on delay time
td(on)
15
Rise time
tr
60
Turn-off delay time
td(off)
100
Fall time
tf
80
Body to drain diode forward voltage VDF
0.9
Body to drain diode reverse
recovery time
trr
800
Note: 3. Pulse Test
Ratings
900
±30
4
10
4
60
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
4.0
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V*3
S
ID = 2 A, VDS = 20 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns RL = 15
ns
ns
V IF = 4 A, VGS = 0
ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
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