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K1983 Просмотр технического описания (PDF) - Fuji Electric

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K1983 N-channel MOS-FET Fuji
Fuji Electric Fuji
K1983 Datasheet PDF : 2 Pages
1 2
2SK1983-01
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
900
Drain-Gate-Voltage (RGS=20K)
V DGR
900
Continous Drain Current
ID
3
Pulsed Drain Current
I D(puls)
12
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
PD
60
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
900V 4Ω 3A 60W
> Outline Drawing
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=900V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=1,5A
VGS=10V
Forward Transconductance
g fs
ID=1,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
tr
ID=3A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
tf
RGS=10
Avalanche Capability
I AV
L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=IDR VGS=0V
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
900
V
2,5
3,0 3,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
2,5 4,0
2
4
S
1000 1500 pF
90 135 pF
25
40 pF
20
30 ns
10
15 ns
60
90 ns
15
25 ns
3
A
3A
12 A
0,98 1,47 V
400
ns
2,5
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
2,08 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
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