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Part Name
Description
2SD1508 View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
Toshiba
2SD1508 Datasheet PDF : 5 Pages
1
2
3
4
5
600
500
400
300
200
100
0
0
I
C
– V
CE
Common emitter
Tc = 25°C
60
50
40
30
20
IB = 10
μ
A
0
1
2
3
4
5
6
7
Collector-emitter voltage V
CE
(V)
600
500
400
300
200
100
0
0
I
C
– V
CE
Common emitter
Tc =
−
50°C
160
140
120
100
80
60
40
IB = 20
μ
A
0
1
2
3
4
5
6
7
Collector-emitter voltage V
CE
(V)
2SD1508
600
500
400
300
200
100
0
0
I
C
– V
CE
Common emitter
Tc = 100°C
35
30
25
20
15
10
IB = 5
μ
A
0
1
2
3
4
5
6
7
Collector-emitter voltage V
CE
(V)
I
C
– V
BE
1.0
Common emitter
VCE = 2 V
0.8
0.6
0.4
Tc = 100°C
25
−
50
0.2
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Base-emitter voltage V
BE
(V)
100000
50000
30000
10000
5000
3000
h
FE
– I
C
Common emitter
VCE = 2 V
Tc = 100°C
25
−
50
1000
500
300
0.003 0.01 0.03
0.1
0.3
1
3
Collector current I
C
(A)
V
CE (sat)
– I
C
30
Common emitter
IC/IB = 1000
10
5
3
Tc =
−
50°C
1
0.5
100
0.3
25
0.1
0.003 0.01 0.03
0.1
0.3
1
3
Collector current I
C
(A)
3
2009-12-21
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