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2SC3265O View Datasheet(PDF) - Toshiba

Part Name
Description
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2SC3265O Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
2SC3265
Unit: mm
· High DC current gain: hFE (1) = 100~320
· Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
· Complementary to 2SA1298
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
30
V
25
V
5
V
800
mA
160
mA
200
mW
150
°C
-55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 0.1 mA, IC = 0
hFE (1)
VCE = 1 V, IC = 100 mA
(Note)
hFE (2)
VCE (sat)
VCE = 1 V, IC = 800 mA
IC = 500 mA, IB = 20 mA
VBE
VCE = 1 V, IC = 10 mA
fT
VCE = 5 V, IC = 10 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
25
¾
¾
V
5
¾
¾
V
100 ¾ 320
40
¾
¾
¾
¾
0.4
V
0.5
¾
0.8
V
¾ 120 ¾ MHz
¾
13
¾
pF
1
2003-03-25
 

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