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KA1L0880B-YDTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1L0880B-YDTU
Fairchild
Fairchild Semiconductor Fairchild
KA1L0880B-YDTU Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KA1L0880B/KA1M0880B
Absolute Maximum Ratings
Parameter
Maximum Drain voltage (1)
Drain-Gate voltage (RGS=1M)
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current (4)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Maximum Supply voltage
Input voltage range
Total power dissipation
Symbol
VD,Max
VDGR
VGS
IDM
EAS
IAS
ID
ID
VCC,MAX
VFB
PD
Derating
Operating ambient temperature
Storage temperature
TA
TSTG
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, VDD=50V, RG=25, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Value
800
800
±30
32.0
810
15
8.0
5.6
30
0.3 to VSD
190
1.54
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
W
W/°C
°C
°C
2
 

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