datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

KA1H0365R-YDTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1H0365R-YDTU
Fairchild
Fairchild Semiconductor Fairchild
KA1H0365R-YDTU Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KA1L0365R/KA1M0365R/KA1H0365R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
2. S = -1--
R
Condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=1.5A
VDS=50V, ID=1.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=3.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=3.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min.
650
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
V
- 50 µA
- 200 µA
3.6 4.5
-
-
S
720 -
40 - pF
40 -
150 -
100 -
nS
150 -
42 -
- 34
7.3 - nC
13.3 -
3
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]