WFP7N60 View Datasheet(PDF) - Wisdom technologies
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WFP7N60 Datasheet PDF : 6 Pages
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600
--
--
△BVDSS/ Breakdown Voltage Temperature ID=250μA,Reference
△TJ Conficient
to 25℃
--
0.67
--
V
V/℃
Vds=600V, Vgs=0V
--
IDSS Zero Gate Voltage Drain Current Vds=480V, Tc=125℃
--
10
μA
100 μA
Gate-body leakage Current,
IGSSF
Forward
Vgs=+30V, Vds=0V
--
-- 100 nA
Gate-body leakage Current,
IGSSR
Reverse
Vgs=-30V, Vds=0V
--
-- -100 nA
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
2
--
4
V
Id=3.7A,Vgs=10V
--
-- 1.2
Ω
Dynamic Characteristics
Ciss Input Capacitance
VDS=25V，VGS=0，
--
1100 1430
pF
Coss Output Capacitance
-- 135 175 pF
f=1.0MHz
Crss Reverse Transfer Capacitance
--
16
21
pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
--
30
70
nS
VDD=300V，ID=7A
RG=25Ω (Note 3,4)
--
80 170 nS
--
65 140 nS
--
60 130 nS
VDS=480,VGS=10V， --
29
38
nC
--
7
--
nC
ID=7A (Note 3,4)
14.5 --
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes
Maximun Continuous Drain-Sourse Diode Forward
--
Current
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Id=7A
--
Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS=7A,VGS =0V
--
diF/dt=100A/μs (Note3)
--
1, L=15.7mH, IAS=7A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
--
7
A
--
28
A
--
1.5
V
320 --
nS
2.4
--
μC
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Rev.A0,August , 2010 |
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