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WFF4N60 View Datasheet(PDF) - Wisdom technologies

Part NameDescriptionManufacturer
WFF4N60 600V N-Channel MOSFET WISDOM
Wisdom technologies WISDOM
WFF4N60 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics (Continued)
HIGH VOLTAGE N-Channel MOSFET
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. ID = 250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
10 ms
100
100 ms
DC
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9-2. Maximum Safe Operating Area
for WFF4N60
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 2.25 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
D =0.5
100
0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
1 0 -2
1 0 -5
N otes :
1.
Zθ
(t)
JC
=
3 .7 9
/W
M ax.
2 . D uty F actor, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
sin g le p u lse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for WFF4N60
www.wisdom-technologies.com
Rev.A0,August , 2010 |
4
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