WFF4N60 View Datasheet(PDF) - Wisdom technologies
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Description
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WFF4N60 Datasheet PDF : 6 Pages
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Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
6
5
4
VGS = 10V
3
2
VGS = 20V
1
※ Note : T = 25℃
J
0
0
2
4
6
8
10
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
※ Notes ;
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
150oC
100
25oC
-55oC
10-1
2
※ Notes :
1. V = 40V
DS
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : I = 4.5A
D
0
0
4
8
12
16
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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Rev.A0,August , 2010 |
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