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WFF4N60 Просмотр технического описания (PDF) - Wisdom technologies

Номер в каталогеКомпоненты Описаниепроизводитель
WFF4N60 600V N-Channel MOSFET WISDOM
Wisdom technologies WISDOM
WFF4N60 Datasheet PDF : 6 Pages
1 2 3 4 5 6
HIGH VOLTAGE N-Channel MOSFET
WFF4N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances
Excellent Switching Characteristics
Extended Safe Operating Area
Unrivalled Gate Charge :Qg= 15nC (Typ.)
BVDSS=600V,ID=4A
RDS(on) :2.3 (Max) @VG=10V
100% Avalanche Tested
GD S
D
G
S
TO220F
GGate,DDrain,SSourse
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF4N60
600
4*
2.8*
±30
240
4
33
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance,Junction to Case
RθJA
Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
3.47
62.5
Units
/W
/W
www.wisdom-technologies.com
Rev.A0,August , 2010 |
1
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