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5962F-0422701QXA View Datasheet(PDF) - Aeroflex Corporation

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Description
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5962F-0422701QXA
Aeroflex
Aeroflex Corporation Aeroflex
5962F-0422701QXA Datasheet PDF : 22 Pages
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DATA RETENTION CHARACTERISTICS (Pre-Radiation)* (VDD2 = VDD2 (min), 1 Sec DR Pulse)
SYMBOL
PARAMETER
TEMP MINIMUM MAXIMUM UNIT
VDR
VDD1 for data retention
IDDR 1
Data retention current
Device Type 1
--
1.0
-55°C
--
25°C
--
125°C
--
--
V
700
μA
700
μA
55
mA
IDDR 1
Data retention current
Device Type 2
-40°C
--
25°
--
125°C
--
700
μA
700
μA
55
mA
tEFR1,2
Chip deselect to data retention time
--
0
--
ns
tR1,2
Operation recovery time
--
tAVAV
--
ns
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25oC per MIL-STD-883 Method 1019, Condition
A up to the maximum TID level procured.
1. E = VDD2 all other inputs = VDD2 or VSS
2. VDD2 = 0 volts to VDD2 (max)
VDD1
1.7V
DATA RETENTION MODE
VDR > 1.0V
1.7V
tEFR
tR
VIN >0.7VDD2 CMOS
VSS
E
VIN <0.3VDD2 CMOS
VDD2
Figure 5. Low VDD Data Retention Waveform
VDD2
DUT
Zo = 50-ohms
VDD2
RTERM
100-ohms
CL =
50pF
RTERM
100-ohms
Test
Point
CMOS
VDD2-0.05V
0.0V
< 2ns
Input Pulses
90%
10%
< 2ns
Notes:
1. Measurement of data output occurs at the low to high or high to low transition mid-point
(i.e., CMOS input = VDD2/2).
Figure 6. AC Test Loads and Input Waveforms
12
 

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