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UB20BCT-E3/4W View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
UB20BCT-E3/4W
Vishay
Vishay Semiconductors Vishay
UB20BCT-E3/4W Datasheet PDF : 5 Pages
1 2 3 4 5
New Product
U(B)20BCT thru U(B)20DCT
Vishay General Semiconductor
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1000
100
10
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
1
0.1
0.001
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89017 For technical questions within your region, please contact one of the following:
Revision: 13-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
 

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