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K100F06K View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
K100F06K TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) Toshiba
Toshiba Toshiba
K100F06K Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TK100F06K3
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10μ
100μ
SINGLE PULSE
1m
10m
100m
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.83°C/W
1
10
SAFE OPERATING AREA
1000
ID max (pulse) *
100 ID max (continuous)
100 μs *
1 ms *
10
DC OPEATION
Tc = 25°C
1
0.1
Single pulse Tc=25
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10
100
Drain-source voltage VDS (V)
EAS – Tch
100
L = 11uH
VDD = 25V
IAR = 100A
80
60
40
20
0
25
50
75 100 125 150 175 200
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 11 μH
Waveform
EΕAS
=
1
2
L I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
6
2009-04-17
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