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K100F06K Просмотр технического описания (PDF) - Toshiba

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K100F06K TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) Toshiba
Toshiba Toshiba
K100F06K Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RDS (ON) Tc
10
Common source
VGS = 10 V
Pulse Test
8
100 A
6
ID = 25,50 A
4
2
0
80 40 0
40 80 120 160 200
Case temperature Tc (°C)
TK100F06K3
IDR VDS
1000
100
10
1
0.1
0
10
5
3
VGS = 0
1
Common source
Tc = 25°C
Pulse Test
0.3
0.6
0.9
1.2
1.5
Drain-source voltage VDS (V)
100000
Capacitance – VDS
10000
Ciss
1000
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
100
0.1
1
10
Drain-source voltage VDS (V)
Coss
Crss
100
Vth Tc
5
Common source
VDS = 10 V
ID = 1mA
4
Pulse Test
3
2
1
0
80 40
0
40
80 120 160 200
Case temperature Tc (°C)
PD Tc
250
200
150
100
50
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input / output
characteristics
80
16
Common source
70
ID = 100 A
Tc = 25°C
14
Pulse Test
60
12
24
50 VDS
12
10
VDD = 48V
40
8
30
6
VGS
20
4
10
2
0
0
0 20 40 60 80 100 120 140 160
Total gate charge Qg (nC)
5
2009-04-17
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