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K100F06K Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K100F06K TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) Toshiba
Toshiba Toshiba
K100F06K Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ID – VDS
100
Common source 10
6.3
6
Tc = 25°C
Pulse Test
6.5
80
7
8
5.8
60
5.6
40
5.4
20
VGS = 5 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
TK100F06K3
ID – VDS
200
Common source 10
7
Tc = 25°C
Pulse Test
8
160
6.5
6.3
120
80
40
0
0
6
5.8
5.6
VGS = 5.4 V
0.4
0.8
1.2
1.6
2
Drain-source voltage VDS (V)
200
Common source
VDS = 10 V
Pulse Test
160
ID – VGS
120
80
100
25
Tc = −55°C
40
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
VDS – VGS
1
Common source
Tc = 25°C
Pulse Test
0.8
0.6
0.4
ID = 100 A
50
0.2
25
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
1000
Common source
VDS = 10 V
Pulse Test
|Yfs| – ID
100
Tc = −55°C
100
25
10
1
1
10
100
1000
Drain current ID (A)
RDS (ON) – ID
100
Common source
Tc = 25°C
Pulse Test
10
VGS = 10 V
1
1
10
100
1000
Drain current ID (A)
4
2009-04-17
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