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K100F06K Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K100F06K TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) Toshiba
Toshiba Toshiba
K100F06K Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Electrical Characteristics (Ta = 25°C)
TK100F06K3
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS VGS = ±20 V, VDS = 0 V
IDSS VDS = 40 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
V (BR) DSX ID = 10 mA, VGS = −20 V
Vth
VDS = 10 V, ID = 1 mA
RDS (ON) VGS = 10 V, ID = 50 A
YfsVDS = 10 V, ID = 50 A
Ciss
Crss
VDS = 10V, VGS = 0 V, f = 1 MHz
Coss
⎯ ±10 μA
10
μA
60
V
35
3.0
4.0
V
4.0 5.0 mΩ
87
174
S
4500
600
pF
800
tr
10 V
VGS
0V
ton
18
ID = 50 A
VOUT
33
RL = 0.6 Ω
ns
tf
VDD 30 V
Duty 1%, tw = 10 μs
toff
23
73
Qg
Qgs
VDD 48 V, VGS = 10 V, ID = 100 A
Qgd
98
57
nC
41
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
IDR = 100 A, VGS = 0 V
IDR = 100 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
100
A
300
A
1.2
V
62
ns
62
nC
Marking
K100F06K
3
Part No.
(or abbreviation code)
Lot No.
Note 6
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
2
2009-04-17
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