TC74ACT138F View Datasheet(PDF) - Toshiba

Part Name

Description

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TC74ACT138F

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

TC74ACT138P/F/FN/FT

Electrical Characteristics

DC Characteristics

Characteristics

Symbol

High-level input

voltage

VIH

Test Condition

―

Ta = −40 to

Ta = 25°C

85°C

Unit

VCC

(V)

Min

Typ.

Max

Min

Max

4.5

to 2.0

―

―

2.0

―

V

5.5

Low-level input

voltage

VIL

4.5

―

to ―

―

0.8

―

0.8

V

5.5

High-level output

voltage

Low-level output

voltage

Input leakage

current

VOH

VOL

IIN

VIN

IOH = −50 μA

4.5 4.4 4.5

―

4.4

―

= VIH or IOH = −24 mA

4.5 3.94 ―

― 3.80 ―

V

VIL

IOH = −75 mA (Note) 5.5 ―

―

― 3.85 ―

VIN

IOL = 50 μA

4.5 ―

0.0 0.1

―

0.1

= VIH or IOL = 24 mA

4.5 ―

― 0.36

― 0.44

V

VIL

IOL = 75 mA (Note) 5.5 ―

―

―

― 1.65

VIN = VCC or GND

5.5 ―

― ±0.1 ― ±1.0 μA

Quiescent supply

current

ICC

VIN = VCC or GND

Per input: VIN = 3.4 V

IC

Other input: VCC or GND

5.5 ―

5.5 ―

―

8.0

― 80.0 μA

― 1.35 ―

1.5 mA

Note:

This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns)

Characteristics

Symbol

Test Condition

Ta = 25°C

Ta = −40 to

85°C

Unit

VCC (V) Min Typ. Max Min Max

Propagation delay

time

tpLH

(A, B, C- Y )

tpHL

―

5.0 ± 0.5 ―

6.7 10.1 1.0 11.5 ns

Propagation delay

time

tpLH

(G1- Y )

tpHL

―

5.0 ± 0.5 ―

6.8 10.5 1.0 12.0 ns

Propagation delay

time

tpLH

( G2 - Y )

tpHL

―

5.0 ± 0.5 ―

6.9 11.0 1.0 12.5 ns

Input capacitance

CIN

Power dissipation

capacitance

CPD

―

―

5

10

―

10

pF

(Note) ―

55

―

―

―

pF

Note:

CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

ICC (opr) = CPD·VCC·fIN + ICC

4

2007-10-01

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