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TC74ACT138F View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
TC74ACT138F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Toshiba
Toshiba Toshiba
TC74ACT138F Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TC74ACT138P/F/FN/FT
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-level input
voltage
VIH
Test Condition
Ta = 40 to
Ta = 25°C
85°C
Unit
VCC
(V)
Min
Typ.
Max
Min
Max
4.5
to 2.0
2.0
V
5.5
Low-level input
voltage
VIL
4.5
to
0.8
0.8
V
5.5
High-level output
voltage
Low-level output
voltage
Input leakage
current
VOH
VOL
IIN
VIN
IOH = 50 μA
4.5 4.4 4.5
4.4
= VIH or IOH = 24 mA
4.5 3.94
3.80
V
VIL
IOH = 75 mA (Note) 5.5
3.85
VIN
IOL = 50 μA
4.5
0.0 0.1
0.1
= VIH or IOL = 24 mA
4.5
0.36
0.44
V
VIL
IOL = 75 mA (Note) 5.5
1.65
VIN = VCC or GND
5.5
±0.1 ±1.0 μA
Quiescent supply
current
ICC
VIN = VCC or GND
Per input: VIN = 3.4 V
IC
Other input: VCC or GND
5.5
5.5
8.0
80.0 μA
1.35
1.5 mA
Note:
This spec indicates the capability of driving 50 transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
AC Characteristics (CL = 50 pF, RL = 500 , input: tr = tf = 3 ns)
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = 40 to
85°C
Unit
VCC (V) Min Typ. Max Min Max
Propagation delay
time
tpLH
(A, B, C- Y )
tpHL
5.0 ± 0.5
6.7 10.1 1.0 11.5 ns
Propagation delay
time
tpLH
(G1- Y )
tpHL
5.0 ± 0.5
6.8 10.5 1.0 12.0 ns
Propagation delay
time
tpLH
( G2 - Y )
tpHL
5.0 ± 0.5
6.9 11.0 1.0 12.5 ns
Input capacitance
CIN
Power dissipation
capacitance
CPD
5
10
10
pF
(Note)
55
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC
4
2007-10-01
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