SVD2N60T View Datasheet(PDF) - Silan Microelectronics
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SVD2N60T Datasheet PDF : 6 Pages
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NOMENCLATURE
SVD2N60T
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
1.0
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
4.5V
0.1
1
Note:
1. 250s Pulse Test
2. TC=25 C
10
VDS Drain-source voltage[V]
10.0
8.0
6.0
4.0
2.0
0.0
0.0
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
VGS=10V
VGS=20V
Note:TJ=25 C
1.0
2.0
3.0
4.0
5.0
ID Drain Current [A]
100.00
Figure 2. Transfer Characteristics
10.00
1.00
0.10
0.01
0
150 ć
25 ć
-55 ć
Note:
1.VGS=40V
2. 250 s pulse test
2
4
6
8
10
VGS Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
10.0
1.0
150ć
25ć
Note:
1.VGS=0V
2. 250 s pulse test
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD Source-Drain Voltage [V]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2009.07.09
Page 3 of 6
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