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Q1NC45R View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
Q1NC45R N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
Q1NC45R Datasheet PDF : 15 Pages
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Electrical characteristics
2
Electrical characteristics
STD2NC45-1 - STQ1NC45R-AP
(TCASE = 25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
Drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test condictions
Min. Typ. Max. Unit
ID = 250µA, VGS = 0
450
V
VDS = Max rating
VDS = Max rating, TC = 125°C
1 µA
50 µA
VGS = ± 30V
±100 nA
VDS = VGS, ID = 250µA
2.3 3 3.7 V
VGS = 10V, ID = 0.5A
4.1 4.5
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
gfs (1)
Forward transconductance VDS > ID(on) x RDS(on)max,
ID = 0.5A
1.1
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz, VGS = 0
160
27.5
4.7
pF
pF
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 360V, ID = 1.5A,
VGS = 10V, RG = 4.7
(see Figure 18)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
7
nC
1.3 10 nC
3.2
nC
4/15
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