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STP18N55M5 View Datasheet(PDF) - STMicroelectronics

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Description
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STP18N55M5 Datasheet PDF : 22 Pages
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Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 6.5 A
Min. Typ. Max. Unit
550
V
1 µA
100 µA
100 nA
3
4
5
V
0.18 0.24 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1352
pF
-
38
- pF
3.7
pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 440 V
-
98
- pF
-
35
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.7
-
Ω
Qg
Total gate charge
VDD = 440 V, ID = 6.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
31
nC
-
6.3
- nC
14
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22
Doc ID 17078 Rev 2
 

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