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F11NM80 View Datasheet(PDF) - STMicroelectronics

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F11NM80 Datasheet PDF : 17 Pages
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STB/F/P/W11NM80
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=11 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
11 A
-
44 A
-
0.86 V
612
ns
- 7.22
µC
23.6
A
970
ns
- 11.25
µC
23.2
A
Doc ID 9241 Rev 10
5/17
 

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