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F11NM80 View Datasheet(PDF) - STMicroelectronics

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F11NM80 Datasheet PDF : 17 Pages
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Electrical characteristics
2
Electrical characteristics
STB/F/P/W11NM80
(TCASE= 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
800
dv/dt (1) Drain source voltage slope VDD = 640 V, ID = 11 A,
VGS = 10 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
3
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
1. Characteristic value at turn off on inductive load
30
4
0.35
10
100
100
5
0.40
V
V/ns
µA
µA
nA
V
Table 6.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID= 7.5 A
VDS =25 V, f=1 MHz,
VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDD=640 V, ID = 11 A
VGS =10 V
Figure 10
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=400 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
Figure 17
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
8
-
S
1630
pF
- 750 -
pF
30
pF
43.6
nC
- 11.6 -
nC
21
nC
- 2.7 -
22
ns
17
ns
-
-
46
ns
15
ns
4/17
Doc ID 9241 Rev 10
 

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