F11NM80 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

F11NM80

N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

STMicroelectronics 

STB/F/P/W11NM80

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(2)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

VISO Insulation withstand voltage (DC)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by the maximum temperature allowed

2. Pulse width limited by safe operating area

Value

TO-220, D²PAK,

TO-247

800

±30

11

8

44

150

1.2

Unit

TO-220FP

11 (1)

8 (1)

44 (1)

35

0.28

2500

V

V

A

A

A

W

W/°C

V

-65 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Value

TO-220, D²PAK,

TO-247

Unit

TO-220FP

0.83

62.5

3.6

°C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj=25 °C, ID=IAR, VDD=50 V)

Value

Unit

2.5

A

400

mJ

Doc ID 9241 Rev 10

3/17

Share Link: