SPI20N60C3 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

SPI20N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPP20N60C3, SPB20N60C3

SPI20N60C3, SPA20N60C3

17 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=20.7A

150

V/ns

dv/dt(off)

100

75

18 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=3.6Ω

0.08

*) Eon includes SPD06S60 diode

mWs

commutation losses

0.06

0.05

Eoff

0.04

0.03

50

dv/dt(on)

0.02

25

0.01

Eon*

0

0 5 10 15 20 25 30 Ω 40

RG

19 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=20.7A

0.4 *) Eon includes SPD06S60 diode

mWs

commutation losses

0.3

Eoff

0.25

0.2

Eon*

0.15

0.1

0

0

3

6

9

20 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

20

12 15 A 21

ID

A

Tj(Start)=25°C

10

5

Tj(Start)=125°C

0.05

0

0 5 10 15 20 25 30 Ω 40

RG

Page 9

0

10

-3

10 -2

10 -1

10 0

10 1

10 2

µs 10 4

tAR

2003-10-08

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