RB521S30 View Datasheet(PDF) - NXP Semiconductors.
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Description
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RB521S30 Datasheet PDF : 12 Pages
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NXP Semiconductors
0.3
(1)
IF(AV)
(A)
(2)
0.2
(3)
0.1
(4)
006aab718
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
0.3
(1)
IF(AV)
(A)
(2)
0.2
(3)
0.1
(4)
006aab719
0.0
0
25 50 75 100 125 150 175
Tamb (°C)
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
8. Test information
0.0
0
25 50 75 100 125 150 175
Tsp (°C)
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 10. Average forward current as a function of
solder point temperature; typical values
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
t
+ IF
trr
t
(1)
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 11. Reverse recovery time test circuit and waveforms
RB521S30_1
Product data sheet
Rev. 01 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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