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PBHV9050T View Datasheet(PDF) - NXP Semiconductors.

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PBHV9050T Datasheet PDF : 12 Pages
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NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 360 V;
current
IE = 0 A
VCB = 360 V;
IE = 0 A; Tj = 150 °C
ICES
collector-emitter cut-off VCE = 360 V;
current
VBE = 0 V
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A
current
hFE
VCEsat
VBEsat
fT
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
transition frequency
VCE = 10 V
IC = 10 mA
IC = 50 mA
IC = 20 mA;
IB = 2 mA
IC = 50 mA;
IB = 10 mA
IC = 50 mA;
IB = 10 mA
VCE = 10 V;
IE = 10 mA;
f = 100 MHz
Cc
collector capacitance VCB = 20 V;
IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V;
IC = ic = 0 A;
f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
VCC = 20 V;
IC = 0.05 A;
IBon = 5 mA;
IBoff = 10 mA
tf
fall time
toff
turn-off time
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Min
-
-
-
-
100
[1] 80
-
-
[1] -
-
-
-
-
-
-
-
-
-
Typ Max Unit
-
100 nA
-
10 µA
-
100 nA
-
100 nA
160 300
160 300
115 200 mV
95 200 mV
0.75 0.9 V
50
-
MHz
6
-
pF
170 -
pF
75
-
ns
1600 -
ns
1675 -
ns
1200 -
ns
550 -
ns
1750 -
ns
PBHV9050T_1
Product data sheet
Rev. 01 — 16 September 2009
© NXP B.V. 2009. All rights reserved.
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