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PBHV9050T View Datasheet(PDF) - NXP Semiconductors.

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PBHV9050T Datasheet PDF : 12 Pages
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NXP Semiconductors
PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VCESM
collector-emitter peak
VBE = 0 V
-
voltage
VEBO
IC
ICM
IBM
Ptot
Tj
Tamb
Tstg
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
[1]
-
55
65
Max Unit
500 V
500 V
500 V
6
V
0.15 A
0.5 A
200 mA
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
Ptot
(mW)
300
006aab150
200
100
0
75
25
25
FR4 PCB, standard footprint
Fig 1. Power derating curve
75
125
175
Tamb (°C)
PBHV9050T_1
Product data sheet
Rev. 01 — 16 September 2009
© NXP B.V. 2009. All rights reserved.
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