NE5550779A-T1A-A View Datasheet(PDF) - Renesas Electronics
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NE5550779A-T1A-A Datasheet PDF : 17 Pages
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NE5550779A
TYPICAL CHARACTERISTICS 2 (TA = 25°C)
RF: f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
45
Pout - 3.6 V
3.5
45
GP - 3.6 V
80
Pout - 4.5 V
GP - 4.5 V
Pout - 6.0 V
GP - 6 V
Pout - 7.5 V
40
Pout - 9 V
3.0
40
GP - 7.5 V
GP - 9 V
70
IDS - 3.6 V
ηadd - 3.6 V
IDS - 4.5 V
ηadd - 4.5 V
IDS - 6 V
35
ηadd - 6 V
60
35
IDS - 7.5 V
IDS - 9 V
2.5
ηadd - 7.5 V
ηadd - 9 V
30
50
30
2.0
25
40
25
1.5
20
30
20
1.0
15
20
15
0.5
10
10
10
–5 0
5 10 15 20 25
Input Power Pin (dBm)
0.0
30
5
–5 0
0
5 10 15 20 25 30
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 8 of 15
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