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NE5550979A-T1 데이터 시트보기 (PDF) - Renesas Electronics

부품명NE5550979A-T1 Renesas
Renesas Electronics Renesas
상세내역Silicon Power LDMOS FET
NE5550979A-T1 Datasheet PDF : 13 Pages
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NE5550979A
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] [RF Devices] [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 9 of 11
Direct download click here
 

FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS
•  150 MHz Band Radio System
•  460 MHz Band Radio System
•  900 MHz Band Radio System

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