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NE5550979A-T1 View Datasheet(PDF) - Renesas Electronics

Part NameNE5550979A-T1 Renesas
Renesas Electronics Renesas
DescriptionSilicon Power LDMOS FET
NE5550979A-T1 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NE5550979A
TEST CIRCUIT SCHEMATIC FOR 900 MHz
VGS
VDS
IN
50 Ω C10
C11
R1
C1
L1
C1
OUT
C23 50 Ω
FET
NE5550979A
C20
C21
C22
<R> COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
C20
C21
C22
C23
R1
L1
PCB
SMA Connecter
Value
1μF
100 pF
15 pF
3.3 pF
3.3 pF
12 pF
100 pF
4.7 kΩ
123 nH
Type
GRM31CR72A105KA01B
GRM1882C1H101JA01
ATC100A150JW
ATC100A3R3BW
ATC100A3R3BW
ATC100A120JT
ATC100A101JT
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.5 mm, φ D = 3 mm, 10 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Maker
Murata
Murata
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
SSM
Ohesangyou
Panasonic
WAKA
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 7 of 11
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FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS
•  150 MHz Band Radio System
•  460 MHz Band Radio System
•  900 MHz Band Radio System

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