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NE5550979A-T1 데이터 시트보기 (PDF) - Renesas Electronics

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NE5550979A-T1 Silicon Power LDMOS FET Renesas
Renesas Electronics Renesas
NE5550979A-T1 Datasheet PDF : 13 Pages
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NE5550979A
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
R: f = 460MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200mA, Pout (2 tone) = 12 to 38 dBm
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
50
Pout - 3.6 V
5.0
Pout - 4.5 V
45
Pout - 6.0 V
Pout - 7.5 V
4.5
Pout - 9 V
40
IDS - 3.6 V
IDS - 4.5 V
4.0
IDS - 6.0 V
35
IDS - 7.5 V
IDS - 9 V
3.5
30
3.0
25
2.5
20
2.0
15
1.5
10
1.0
5
0.5
0
–5 0
0.0
5 10 15 20 25 30 35
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
35
Gp - 7.5 V
70
Gp - 9 V
ηadd - 3.6 V
30
ηadd - 4.5 V
60
ηadd - 6.0 V
ηadd - 7.5 V
25
ηadd - 9 V
50
20
40
15
30
10
20
5
10
0
–5 0
0
5 10 15 20 25 30 35
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 6.0 V
–10
2f0 - 7.5 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 6.0 V
–20
3f0 - 7.5 V
2f0 - 9 V
3f0 - 9 V
–30
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 6 V
–10
IM3 - 7.5 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 6.0 V
–20
IM5 - 7.5 V
IM3 - 9 V
IM5 - 9 V
–30
–40
–40
–50
–50
–60
–60
–70
10 15 20 25 30 35 40 45
Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
–70
10 15 20 25 30 35 40
2 Tones Output Power Pout (2 tone) (dBm)
Page 4 of 11
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