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NE5550979A-T1 데이터 시트보기 (PDF) - Renesas Electronics

부품명NE5550979A-T1 Renesas
Renesas Electronics Renesas
상세내역Silicon Power LDMOS FET
NE5550979A-T1 Datasheet PDF : 13 Pages
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NE5550979A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
IN
50 Ω C10
C11
C12
R1
C1
L1
C1
FET
C20
NE5550979A (WS)
OUT
C22 50 Ω
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
C12
C20
C21
C22
R1
L1
<R>
PCB
SMA Connecter
Value
1μF
100 pF
24 pF
2.4 pF
27 pF
1.8 pF
100 pF
4.7 kΩ
123 nH
Type
GRM31CR72A105KA01B
GRM1882C1H101JA01
ATC100A240JW
ATC100A2R4BW
ATC100A270JW
ATC100A1R8BW
ATC100A101JW
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.5 mm, φ D = 3 mm, 10 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Maker
Murata
Murata
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
American Technical
Ceramics
SSM
Ohesangyou
Panasonic
WAKA
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
VGS
GND
VDS
C1
C12
R1
C11
C10
C1
L1
C20 C21
C22
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 3 of 11
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FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS
•  150 MHz Band Radio System
•  460 MHz Band Radio System
•  900 MHz Band Radio System

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