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NE5550979A-T1 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
NE5550979A-T1
Renesas
Renesas Electronics Renesas
NE5550979A-T1 Datasheet PDF : 13 Pages
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NE5550979A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
1.7
25
MAX.
9.0
2.85
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Note 1 : Pin = 10 dBm
Note 2 : Pin = 5 dBm
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
GL Note 1
Pout
IDS
ηd
ηadd
GL Note 2
Pout
IDS
ηd
ηadd
GL Note 1
Test Conditions
VGS = 6.0 V
VDS = 25 V
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 700±100 mA
Channel to Case
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 200 mA (RF OFF)
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
IDset = 200 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 200 mA (RF OFF)
MIN.
1.15
25
1.8
38.5
TYP. MAX.
100
10
1.65 2.25
37
2.2
2.9
5.0
39.5
1.70
68
66
22.0
39.6
1.60
75
73
25.0
38.6
1.76
55
52
16.0
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 11
 

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