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NE5550979A-T1 View Datasheet(PDF) - Renesas Electronics

Part NameNE5550979A-T1 Renesas
Renesas Electronics Renesas
DescriptionSilicon Power LDMOS FET


NE5550979A-T1 Datasheet PDF : 13 Pages
First Prev 11 12 13
Revision History
NE5550979A Data Sheet
Rev.
1.00
2.00
Date
Nov 25, 2011
Jul 04, 2012
3.00 Mar 12, 2013
Page
p.1
p.5
p.6
p.7
p.8
p.9
P3
P5
P7
First edition issued
Description
Summary
Modification of ORDERING INFORMATION
Addition of TEST CIRCUIT SCHEMATIC FOR 157 MHz
Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz
Addition of TEST CIRCUIT SCHEMATIC FOR 900 MHz
Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
Modification of S-PARAMETERS
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
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C-1
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FEATURES
•  High Output Power   : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High power added efficiency  : ηadd = 66% TYP. (VDS= 7.5 V, IDset= 200 mA, f = 460 MHz, Pin = 25 dBm)
•  High Linear gain   : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
•  High ESD tolerance   : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
•  Suitable for VHF to UHF-BAND Class-AB power amplifier.

APPLICATIONS
•  150 MHz Band Radio System
•  460 MHz Band Radio System
•  900 MHz Band Radio System

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