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NE5550979A-T1 View Datasheet(PDF) - Renesas Electronics
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Description
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NE5550979A-T1
Silicon Power LDMOS FET
Renesas Electronics
NE5550979A-T1 Datasheet PDF : 13 Pages
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NE5550979A
PACKAGE DIMENSIONS
79A (UNIT: mm)
4.2 MAX.
Source
Gate
Drain
(Bottom View)
1.5±0.2
Source
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
4.0
1.7
Source
Stop up the hole with a rosin or
something to avoid solder flow.
Gate
Drain
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
0.5 0.5
6.1
Through Hole:
φ
0.2 × 33
Page 10 of 11
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