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N0600N View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
N0600N
Renesas
Renesas Electronics Renesas
N0600N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
N0600N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
50
40
VGS = 4.5 V
30
ID = 15 A
20
VGS = 10 V
ID = 15 A
10
Pulsed
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
tf
td(on)
VDD = 30 V
VGS = 10 V
Rg = 0 Ω
td(off)
tr
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10
VGS = 4.5 V
1
VGS = 0 V
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
VGS = 0 V
f = 1 MHz
10
0.01
0.1
Coss
Crss
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
VDS
VGS
40
VDS = 32 V
8
20 V
30
8V
6
20
4
10
0
0
100
2
ID = 30 A
0
10
20
30
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Diode Forward Current - A
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 5 of 6
 

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