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N0600N View Datasheet(PDF) - Renesas Electronics

Part Name
Description
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N0600N
Renesas
Renesas Electronics Renesas
N0600N Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
N0600N
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Symbol Min
Zero Gate Voltage Drain Current IDSS
Gate Leakage Current
IGSS
Gate to Source Cut-off Voltage VGS(off)
1.5
Forward Transfer Admittance 1 | yfs |
4
Drain to Source On-state
Resistance 1
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage 1
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note: 1. Pulsed
Typ
2.0
17.5
22.3
1380
186
109
5.7
6.3
33.2
3.9
29.8
4.2
9.0
0.92
30
39.6
Max
1
±100
2.5
25
36
1.5
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 15 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 30 A
IF = 30A, VGS = 0 V
IF = 30 A, VGS = 0 V,
di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 2 of 6
 

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