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N0600N-S17-AY View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
N0600N-S17-AY
Renesas
Renesas Electronics Renesas
N0600N-S17-AY Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
N0600N
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0220EJ0100
Rev.1.00
Jan 25, 2011
Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on)1 = 25 mMAX. (VGS =10 V, ID = 15 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
Low input capacitance
Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V)
Ordering Information
Part No.
Lead Plating
Packing
Package
N0600N-S17-AY 1
Pure Sn (Tin)
Tube
Isolated TO-220
50p/tube
typ. 2.2 g
Note: 1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±30
±60
20
2.0
150
55 to +150
9.2
12.5
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
6.25
62.5
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 0 V
°C/W
°C/W
R07DS0220EJ0100 Rev.1.00
Jan 25, 2011
Page 1 of 6
 

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