MW7IC18100GNR1 View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

View to exact match

MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 1900 MHz

32

0

S21

28

−5

S11

24

−10

20

−15

16

−20

VDD = 28 Vdc

IDQ1 = 180 mA, IDQ2 = 1000 mA

12

−25

1400 1600 1800 2000 2200 2400 2600

f, FREQUENCY (MHz)

Figure 21. Broadband Frequency Response

36

35

TC = −30_C

34

33

25_C

32

31

VDD = 28 Vdc, Pout = 40 W Avg.

IDQ1 = 180 mA, IDQ2 = 1000 mA

30

85_C

29

1880 1900 1920 1940 1960 1980 2000 2020 2040

f, FREQUENCY (MHz)

Figure 22. Power Gain versus Frequency

109

108

1st Stage

107

2nd Stage

106

105

90

110 130 150 170

190 210 230 250

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 100 W CW, and PAE = 48%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 23. MTTF versus Junction Temperature

RF Device Data

Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

9

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