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MW7IC18100GNR1 View Datasheet(PDF) - Freescale Semiconductor

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Description
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MW7IC18100GNR1 Datasheet PDF : 32 Pages
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC18100N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 2050 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations including GSM EDGE and CDMA.
Final Application
Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,
Pout = 100 Watts CW, 1805 - 1880 MHz or 1930 - 1990 MHz
Power Gain — 30 dB
Power Added Efficiency — 48%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 =
800 mA, Pout = 40 Watts Avg., 1805 - 1880 MHz or 1930 - 1990 MHz
Power Gain — 31 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 80 dBc
EVM — 1.5% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 120 W CW
Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW7IC18100N
Rev. 2, 4/2008
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
1990 MHz, 100 W, 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 02
TO - 270 WB - 14
PLASTIC
MW7IC18100NR1
CASE 1621 - 02
TO - 270 WB - 14 GULL
PLASTIC
MW7IC18100GNR1
CASE 1617 - 02
TO - 272 WB - 14
PLASTIC
MW7IC18100NBR1
VDS1
RFin
VGS1
Quiescent Current
VGS2
Temperature Compensation (1)
RFout/VDS2
NC 1
VDS1
2
NC 3
NC 4
NC 5
RFin
6
RFin
7
NC 8
VGS1
9
VGS2
10
VDS1
11
NC 12
14
RFout /VDS2
13
RFout /VDS2
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
1
 

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