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MW7IC18100GNR1 View Datasheet(PDF) - Freescale Semiconductor

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MW7IC18100GNR1 Datasheet PDF : 32 Pages
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TYPICAL CHARACTERISTICS — 1800 MHz
−10
VDD = 28 Vdc, IDQ1 = 180 mA
f1 = 1840 MHz, f2 = 1840.1 MHz
−20 Two−Tone Measurements, 100 kHz Tone Spacing
−10
VDD = 28 Vdc, IDQ2 = 1000 mA
f1 = 1840 MHz, f2 = 1840.1 MHz
−20 Two−Tone Measurements, 100 kHz Tone Spacing
−30
IDQ2 = 500 mA
750 mA
−40
1000 mA
−50
1250 mA
1500 mA
−60
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 33. Third Order Intermodulation Distortion
versus Output Power @ IDQ1 = 180 mA
0
VDD = 28 Vdc, IDQ1 = 180 mA
−10 IDQ2 = 1000 mA, f1 = 1840 MHz, f2 = 1840.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−20
−30
−40
−50
−60 3rd Order
−70
5th Order
7th Order
−80
1
10
100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 35. Intermodulation Distortion
Products versus Output Power
−30
IDQ1 = 90 mA
135 mA
270 mA
−40
180 mA
225 mA
−50
−60
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 34. Third Order Intermodulation Distortion
versus Output Power @ IDQ2 = 1000 mA
−10
VDD = 28 Vdc, Pout = 80 W (PEP), IDQ1 = 180 mA
IDQ2 = 1000 mA, Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 1840 MHz
IM3−L
−30
IM3−U
IM5−U
−40
IM5−L IM7−U
−50
IM7−L
−60
0.1
1
10
50
TWO−TONE SPACING (MHz)
Figure 36. Intermodulation Distortion
Products versus Tone Spacing
58
57
P6dB = 51.876 dBm (154.028 W)
Ideal
56
P3dB = 51.34 dBm (136.144 W)
55
54
53 P1dB = 50.539 dBm (113.21 W)
52
51
Actual
50
VDD = 28 Vdc, IDQ1 = 180 mA, IDQ2 = 1000 mA
49
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1840 MHz
48
15 16 17 18 19 20 21 22 23 24 25
Pin, INPUT POWER (dBm)
Figure 37. Pulsed CW Output Power versus
Input Power
40
Gps
35
30
25
TC = −30_C
25_C
85_C
−30_C
60
25_C
50
40
85_C
30
20
15
PAE
10
1
20
VDD = 28 Vdc
IDQ1 = 180 mA
10
IDQ2 = 1000 mA
f = 1840 MHz
0
10
100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 38. Power Gain and Power Added
Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
17
 

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