MSA-2111 View Datasheet(PDF) -

MSA-2111 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current

40 mA

Power Dissipation[2,3]

125 mW

RF Input Power

+13 dBm

Junction Temperature

150°C

Storage Temperature

–65°C to 150°C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 2.0 mW/°C for TC > 85°C.

Thermal Resistance[2]:

θjc = 505°C/W

Electrical Specifications[1], TA = 25°C

Symbol

Parameters and Test Conditions: Id = 29 mA, ZO = 50 Ω

GP

Power Gain (|S21| 2)

f = 900 MHz

∆GP

Gain Flatness

f = 0.1 to 0.3 GHz

f3 dB

3 dB Bandwidth

VSWR

Input VSWR

Output VSWR

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

NF

50 Ω Noise Figure

f = 900 MHz

P1 dB Output Power at 1 dB Gain Compression

f = 900 MHz

IP3

Third Order Intercept Point

f = 900 MHz

tD

Group Delay

f = 900 MHz

Vd

Device Voltage

dV/dT Device Voltage Temperature Coefficient

Units Min.

dB 16.0

dB

GHz

dB

dBm

dBm

psec

V

2.9

mV/°C

Typ. Max.

17.5

± 0.5

0.5

1.8:1

1.8:1

3.3

10

20

158

3.6 4.3

–8.0

Notes:

1. The recommended operating current range for this device is 12 to 35 mA. Typical gain performance as a function of

current is on the following page.

Part Number Ordering Information

Part Number

No. of Devices

Container

MSA-2111-TR1

3000

7" Reel

MSA-2111-BLK

100

Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-479

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