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MSA-0886 查看數據表(PDF) - HP => Agilent Technologies

零件编号MSA-0886 HP
HP => Agilent Technologies HP
产品描述 (功能)Cascadable Silicon Bipolar MMIC Amplifier
MSA-0886 Datasheet PDF : 4 Pages
1 2 3 4
MSA-0886 Typical Scattering Parameters[1] (ZO = 50 , TA = 25°C, Id = 36 mA)
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB Mag Ang
dB Mag Ang
Mag Ang
k
0.1
.63
–22 32.5 42.12 160 –36.7 .015 54
0.2
.56
–41 31.3 36.68 143 –33.9 .020 50
0.4
.43
–69 28.6 26.94 119 –29.1 .035 52
0.6
.35
–88 26.4 20.89 104 –27.0 .045 49
0.8
.30 –104
24.2 16.21 93 –25.3 .054 50
1.0
.27 –116
22.4 13.20 83 –24.2 .062 49
1.5
.27 –144
19.2 9.15 65 –21.6 .083 46
2.0
.31 –166
16.7 6.84 49 –19.5 .105 41
2.5
.35
178 14.8 5.50 38 –17.9 .128 36
3.0
.40
162 12.9 4.41 25 –17.4 .135 30
3.5
.45
149 11.4 3.72 13 –16.8 .145 25
4.0
.51
137
9.9 3.14 1 –16.1 .157 19
5.0
.61
116
7.3 2.31 –22 –15.7 .164 10
6.0
.68
100
4.6 1.69 –42 –15.2 .173 4
Note:
1. A model for this device is available in the DEVICE MODELS section.
.62 –24 0.68
.55 –46 0.64
.43 –79 0.69
.34 –103 0.77
.29 –124 0.83
.26 –139 0.87
.23 –172 0.93
.22 163 0.96
.21 149 0.96
.20 132 1.01
.19 124 1.02
.18 121 1.01
.17 130 1.00
.23 143 0.95
Typical Performance, TA = 25°C
(unless otherwise noted)
35
30
25
Id = 36 mA
20
15
10
Id = 20 mA
5
Gain Flat to DC
0
0.1
0.3 0.5 1.0
3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
40
TC = +85°C
TC = +25°C
30 TC = –25°C
20
10
0
0
2
4
6
8
10
Vd (V)
Figure 2. Device Current vs. Voltage.
16
Id = 40 mA
14
Id = 36 mA
12
10
8
6
Id = 20 mA
4
0.1 0.2 0.3 0.5
1.0 2.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
4.5
Id = 20 mA
Id = 36 mA
Id = 40 mA
4.0
3.5
3.0
2.5
0.1
0.2 0.3 0.5 1.0 2.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
23
22
GP
21
13
P1 dB
12
11
4
NF
3
2
–25 0 +25 +55 +85
TEMPERATURE (°C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=36mA.
6-428
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Description
The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent perfor mance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Features
• Usable Gain to 5.5 GHz
• High Gain:
   32.5 dB Typical at 0.1 GHz
   22.5 dB Typical at 1.0 GHz
• Low Noise Figure:
   3.3 dB Typical at 1.0 GHz
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]

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